中南大学学报（自然科学版）2016，Vol.47Issue(11)：3627-3634,8.DOI:10.11817/j.issn.1672-7207.2016.11.002
SiHCl3-H2体系多晶硅化学气相沉积的传递-动力学模型
Transport-kinetic model of polysilicon chemical vapor deposition in SiHCl3-H2 system
摘要
Abstract
The transport−kinetic model (TKM) of polysilicon chemical vapor deposition (Poly-Si CVD) in a SiHCl3-H2 system was developed. The both aspects of surface reaction kinetics and transport phenomena on silicon deposition rate were taken into account in the TKM. The limiting conditions of transport rate and surface chemical reaction rate were studied. Furthermore, the conditions of hydrogen concentration limitation or SiHCl3(TCS) concentration limitation were investigated by TKM and the conditions of both limitation by hydrogen concentration and TCS concentration were also developed in TKM. In order to verify the TKM valid, the silicon deposition rate in different ratios of H2 to TCS were studied by TKM under the conditions of silicon length of 2 m, silicon radium of 10 cm, gas flow rate of 0.67 m/s, surface temperature of 1 398 K and pressure of 0.1 MPa. The results show that by comparing calculated results with the experimental data measured by Habuka in the open literature. The relative error is 3.6%, which confirms the validity of TKM since the relative error is within 10%.关键词
传递-动力学模型/多晶硅/化学气相沉积/硅沉积速率/传递现象Key words
transport-kinetic model/polysilicon/chemical vapor deposition/silicon deposition rate/transport phenomena分类
矿业与冶金引用本文复制引用
侯彦青,聂陟枫,谢刚,马文会,戴永年,俞小花,宋东明..SiHCl3-H2体系多晶硅化学气相沉积的传递-动力学模型[J].中南大学学报（自然科学版）,2016,47(11):3627-3634,8.基金项目
国家自然科学基金资助项目(21566015)；云南省应用基础研究资助项目(2015FB126)；云南省人才培养基金资助项目(kksy201352109)(Project(21566015) supported by the National Natural Science Foundation of China （21566015）
Project(2015FB126) supported by the Applied Basic Research Projects of Yunnan Province （2015FB126）
Project(kksy201352109) supported by the Personnel Training Funds of Yunnan Province) （kksy201352109）
