电子器件2016，Vol.39Issue(6)：1297-1301,5.DOI:10.3969/j.issn.1005-9490.2016.06.004
一种简化衬底模型的SOI MOS变容管模型
A Simplified Substrate Model for SOI MOS Varactor Model
摘要
Abstract
A compact model for RF SOI MOS varactor characterization is presented. The model adopts the simpli?fied loss of SOI substrate and peripheral parasitic RF model to reflect the characterization of varactor RF parasitic effects based on the BSIMSOI. At the meantime,using T π convertion to propose a method to analytically extract the substrate network model parameters. The model has been applied to the devices that have a fixed unit finger width of 5 μm and fixed unit finger length of 1.6 μm with diverse number of fingers were fabricated by Huahong Grace,and under the 15 GHz,the data of model and measurement about CV,QV and S parameters have better fit?ting. In the high frequency,the model can not only ensure the accuracy but also solve the problem of parameter ex?traction and so on.关键词
SOIMOS变容管/简化衬底模型/数据拟合/参数提取算法Key words
RF SOI Varactor/simplified loss of SOI substate/fitting data/Parameter extraction algorithm分类
信息技术与安全科学引用本文复制引用
李文钧,陈小川,刘军..一种简化衬底模型的SOI MOS变容管模型[J].电子器件,2016,39(6):1297-1301,5.基金项目
国家自然科学基金项目(61372021) （61372021）
