电子器件2016，Vol.39Issue(6)：1302-1308,7.DOI:10.3969/j.issn.1005-9490.2016.06.005
一种新型的SOI MOSFET衬底模型提取方法
A New Substrate Model Extraction Method for RF SOI MOSFET
摘要
Abstract
Substrate parasitic network modeling and parameter extraction have significant influence on the model?ing of output characteristics for RF SOI MOSFET devices. The isolation between the introducing bulk region of the BOX layer and the Si substrate is considered. The traditional common-source structure that connecting source , body and substrate together to ground couldn ''t distinguish the substrate parasitic network with the active region. An improved test structure was proved to extract the substrate parasitic parameters by connecting the drain and source as output port and gate as input port. An accurate substrate modeling method based on different fingers was developed to build SOI MOSFETs models. The simulating S parameter matched the measured result quite well under 20 GHz.关键词
RFSOIMOSFET/衬底模型/测试结构/参数提取Key words
RF SOI MOSFET/substrate model/test structure/parameter extraction分类
信息技术与安全科学引用本文复制引用
周文勇,刘军,汪洁..一种新型的SOI MOSFET衬底模型提取方法[J].电子器件,2016,39(6):1302-1308,7.基金项目
浙江省自然科学基金项目(LY13F040005) （LY13F040005）
