液晶与显示2016，Vol.31Issue(12)：1112-1117,6.DOI:10.3788/YJYXS20163112.1112
排气方式及工艺参数对等离子体刻蚀a-Si 均一性的影响
Influence of exhaust mode and process on uniformity of plasma etching a-Si
摘要
Abstract
The influence of power,pressure and gas ratio on uniformity plasma etching a-Si was stud-ied.The results show that the process of pressure in 10 ~ 15 Pa,power in 5 500 ~ 6 500 W is suit-able for industrial production because a-Si etching uniformity is very stable.Etching rate and uniformi-ty of a-Si is more sensitive to etching gas ratio.When SF6 ∶ HCl = 800∶2 800 mL/min ,the etching uniformity of a-Si is the best.Gas exhausting from corners can maintain the plasma concentration ob-vious,which is conducive to enhance the uniformity of plasma etching.Gas exhausting from around will undermine plasma concentration and thus undermine the uniformity of a-Si etching.关键词
等离子体刻蚀/a-Si/均一性/排气方式Key words
plasma etching/a-Si/uniformity/exhaust mode分类
信息技术与安全科学引用本文复制引用
张立祥,王海涛,王尤海,夏庆峰..排气方式及工艺参数对等离子体刻蚀a-Si 均一性的影响[J].液晶与显示,2016,31(12):1112-1117,6.
