电讯技术2016，Vol.56Issue(12)：1405-1408,4.DOI:10.3969/j.issn.1001-893x.2016.12.018
使用传输线理论的硅通孔电参数提取方法
Through-Silicon-Via Parasitics Extraction Based on Transmission Line Theory
摘要
Abstract
Through-Silicon-Via ( TSV ) is a key technology for three-dimentional integrated circuits ( 3 D ICs) . The parasitic RLGC parameters are extracted through transmission line theory( TLT) according to its characteristic. Firstly,the TSV is treated as a lossy transmission line. Then,the parasitic electrical parame-ters are extracted from the simulation results of TSV pair with HFSS and TLT. The computation results show that per unit RLGC parameters vary with the change of frequency. The resistance and admittance per unit length increases from 0 . 45 mΩ/μm and 2 . 5 μS/μm to 2 . 5 mΩ/μm and 17 μS/μm respectively when the frequency increases from 1 MHz to 20 GHz. Meanwhile,the inductance and capacitor per unit length deceases from 8. 7 pH/μm and 8. 8 fF/μm to 7. 5 pH/μm and 0. 2 fF/μm respectively. Compared with tradition methods,such as impedance matrix and admittance matrix,the proposed TLT method is fea-tured by absolute convergence and being more suitable for high frequency application. Moreover,the TLT method is further applicable to the design and analysis of 3D ICs through the full circuit simulation.关键词
三维集成电路/通硅孔/电参数提取/传输线理论Key words
three-dimensional integrated circuit/through-silicon-via(TSV)/electrical parasitics extract/transmission line theory分类
信息技术与安全科学引用本文复制引用
周子琛,申振宁..使用传输线理论的硅通孔电参数提取方法[J].电讯技术,2016,56(12):1405-1408,4.基金项目
国家自然科学基金资助项目(61402529) （61402529）
