东南大学学报（英文版）2016，Vol.32Issue(4)：408-414,7.DOI:10.3969/j.issn.1003-7985.2016.04.003
沟槽栅MOSFET器件SPICE模型
SPICE model of trench-gate MOSFET device
摘要
Abstract
A novel simulation program with an integrated circuit emphasis ( SPICE ) model developed for trench-gate metal-oxide-semiconductor field-effect transistor ( MOSFET ) devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd , gate-to-source capacitance Cgs and drain-to-source capacitance Cds , were modeled, respectively, in the proposed model. Furthermore, the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.关键词
沟槽栅MOSFET/SPICE模型/漂移区电阻模型/动态模型Key words
trench-gate metal-oxide-semiconductor field-effect transistor ( MOSFET )/simulation program with integrated circuit emphasis ( SPICE ) model/drift region resistance model/dynamic model分类
信息技术与安全科学引用本文复制引用
刘超,张春伟,刘斯扬,孙伟锋..沟槽栅MOSFET器件SPICE模型[J].东南大学学报（英文版）,2016,32(4):408-414,7.基金项目
The National Natural Science Foundation of China ( No.61604038), China Postdoctoral Science Foundation ( No.2015M580376), the Natural Science Foundation of Jiangsu Province ( No. BK20160691), Jiangsu Postdoctoral Science Foundation ( No.1501010A) （ No.61604038）
