半导体学报（英文版）2017，Vol.38Issue(1)：95-99,5.DOI:10.1088/1674-4926/38/1/014007
Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena
Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena
O.Latry 1A.Divay 1D.Fadil 1P.Dherbécourt1
作者信息
- 1. Normandie Université, UR, GPM CNRS UMR 6634, 76801 St-Etienne-du-Rouvray, France
- 折叠
摘要
关键词
GaN/Schottky junction/conduction mechanisms/Lambert function/parameters extractionKey words
GaN/Schottky junction/conduction mechanisms/Lambert function/parameters extraction引用本文复制引用
O.Latry,A.Divay,D.Fadil,P.Dherbécourt..Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena[J].半导体学报（英文版）,2017,38(1):95-99,5.
