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The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

Jun Zhao Guangxing Liang Yang Zeng Ping Fan Juguang Hu Jingting Luo Dongping Zhang

半导体学报（英文版）2017，Vol.38Issue(2)：15-19,5.

半导体学报（英文版）2017，Vol.38Issue(2)：15-19,5.DOI:10.1088/1674-4926/38/2/023002

The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

Jun Zhao ¹Guangxing Liang ¹Yang Zeng ²Ping Fan ¹Juguang Hu ¹Jingting Luo ¹Dongping Zhang¹

作者信息

1. Institute of Thin Film Physics and Applications, College of Physics and Energy, Shenzhen University, Shenzhen 518060, China
2. Institute of Chemical Science UMR CNRS 6226, University of Rennes 1, 35042 Rennes, France
折叠

摘要

关键词

CZTSe/thin films/ion-beam sputtering/chalcogenide

Key words

CZTSe/thin films/ion-beam sputtering/chalcogenide

引用本文复制引用

Jun Zhao,Guangxing Liang,Yang Zeng,Ping Fan,Juguang Hu,Jingting Luo,Dongping Zhang..The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition[J].半导体学报（英文版）,2017,38(2):15-19,5.

基金项目

Project supported by the National Natural Science Foundation of China (No.61404086),the Basical Research Program of Shenzhen (Nos.JCYJ20150324140036866,JCYJ20150324141711581),and the Natural Science Foundation of SZU (No.2014017). （No.61404086）

半导体学报（英文版）

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ISSN：1674-4926

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