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High-voltage 4H-SiC PiN diodes with the etched implant junction termination extension

Juntao Li Chengquan Xiao Xingliang Xu Gang Dai Lin Zhang Yang Zhou An Xiang

半导体学报（英文版）2017，Vol.38Issue(2)：47-50,4.

半导体学报（英文版）2017，Vol.38Issue(2)：47-50,4.DOI:10.1088/1674-4926/38/2/024003

High-voltage 4H-SiC PiN diodes with the etched implant junction termination extension

Juntao Li ¹Chengquan Xiao ²Xingliang Xu ¹Gang Dai ²Lin Zhang ¹Yang Zhou ²An Xiang¹

作者信息

1. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
2. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China
折叠

摘要

关键词

silicon carbide/PiN diode/etched implant junction termination extension/blocking voltage

Key words

silicon carbide/PiN diode/etched implant junction termination extension/blocking voltage

引用本文复制引用

Juntao Li,Chengquan Xiao,Xingliang Xu,Gang Dai,Lin Zhang,Yang Zhou,An Xiang..High-voltage 4H-SiC PiN diodes with the etched implant junction termination extension[J].半导体学报（英文版）,2017,38(2):47-50,4.

基金项目

Project supported by the Science and Technology Development Foundation of China Academy of Engineering Physics (No.2014A05011)and the Special Foundation of President of China Academy of Engineering Physics (No.2014-1-100). （No.2014A05011）

半导体学报（英文版）

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ISSN：1674-4926

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