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Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

Huifang Xu Yuehua Dai

半导体学报（英文版）2017，Vol.38Issue(2)：51-58,8.

半导体学报（英文版）2017，Vol.38Issue(2)：51-58,8.DOI:10.1088/1674-4926/38/2/024004

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

Huifang Xu ¹Yuehua Dai²

作者信息

1. Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Fengyang 233100, China
2. Institute of Electronic and Information Engineering, Anhui University, Hefei 230601, China
折叠

摘要

关键词

double-gate tunnel field effect transistor (TFET)/interface trapped charges/analytical model

Key words

double-gate tunnel field effect transistor (TFET)/interface trapped charges/analytical model

引用本文复制引用

Huifang Xu,Yuehua Dai..Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers[J].半导体学报（英文版）,2017,38(2):51-58,8.

基金项目

Project supported by the National Natural Science Foundation of China (No.61376106),the University Natural Science Research Key Project of Anhui Province (No.KJ2016A169),and the Introduced Talents Project of Anhui Science and Technology University. （No.61376106）

半导体学报（英文版）

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ISSN：1674-4926

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