半导体学报（英文版）2017，Vol.38Issue(2)：73-79,7.DOI:10.1088/1674-4926/38/2/025001
6T SRAM cell analysis for DRV and read stability
6T SRAM cell analysis for DRV and read stability
Ruchi 1S.Dasgupta1
作者信息
- 1. Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, India
- 折叠
摘要
关键词
DRV/SRRV/WRRV/data retention/leakage reduction/low power SRAM/sensitivity analysisKey words
DRV/SRRV/WRRV/data retention/leakage reduction/low power SRAM/sensitivity analysis引用本文复制引用
Ruchi,S.Dasgupta..6T SRAM cell analysis for DRV and read stability[J].半导体学报（英文版）,2017,38(2):73-79,7.
