传感技术学报2017，Vol.30Issue(1)：59-63,5.DOI:10.3969/j.issn.1004-1699.2017.01.012
基于多晶硅填充的TSV工艺制作
Fabrication of Through￣Silicon￣Vias Filled with Polysilicon
王文婧 1何凯旋 1王鹏1
作者信息
- 1. 华东光电集成器件研究所，安徽 蚌埠233042
- 折叠
摘要
Abstract
TSV( Through Silicon Via) for MEMS device can realize the vertical interconnection of device structures, then we can achieve the purpose of reducing the chip area and decreasing the power consumption of the device. we discussed the fabrication and filling processes of TSV. By optimizing the ICP etching processes, we get the TSV structure whose opening,middle and bottom size smoothly decreases,and the ratio of depth to width is greater than 20∶1;we use LPCVD( Low Pressure Chemical Vapor Deposition) technology to realize the seamless filling of TSV with polysilicon;After testing of the TSV structure for Insulation characteristics,the insulation resistance of the TSV is more than 10 GΩ,that is,the electrical insulation performance is excellent.关键词
MEMS/TSV/ICP刻蚀/LPCVD/无缝填充/绝缘特性Key words
MEMS/TSV/ICP etching/LPCVD/seamless filled/Insulation characteristics分类
信息技术与安全科学引用本文复制引用
王文婧,何凯旋,王鹏..基于多晶硅填充的TSV工艺制作[J].传感技术学报,2017,30(1):59-63,5.
