发光学报2017，Vol.38Issue(1)：85-90,6.DOI:10.3788/fgxb20173801.0085
电子传输层厚度及阻塞层对量子点发光二极管性能的影响
Influence of Thickness of Electron Transport Layer and Block Layer on The Properties of Quantum Dot Light Emitting Diodes
摘要
Abstract
In view of carrier injection unbalance problem of the quantum dot light emitting diode (QLED), the injection rate of holes and electrons in the quantum dots (QDs) layer was studied. QLED with structure of ITO/ PEDOT∶ PSS / Poly-TPD/ QDs/ Alq3 was fabricated. The experiment re-sults show that all the devices exhibit red light and the turn-on voltage rises as the Alq3 thickness in-creases from 25 nm to 45 nm. When the Alq3 thickness is 30 nm, the current efficiency of the de-vice is high and the injection rate of holes and electrons in the QDs layer reaches a relative balance. Then, the luminescence properties of the devices were further studied through imbedding an electron blocking layer TPD into the QDs/ Alq3 interface. When the TPD thickness is 1 nm, the device still exhibits red light, and green light begins to appear when the TPD thickness is 3 nm and 5 nm. The experiment results show that a thinner thickness and lower LUMO should be chosen for the electron blocking layer.关键词
量子点发光二极管/厚度/能级/电流密度/亮度/电流效率Key words
quantum dot light emitting diode/thickness/energy level/current density/luminance/current efficiency分类
信息技术与安全科学引用本文复制引用
马航,李邓化,陈雯柏,叶继兴..电子传输层厚度及阻塞层对量子点发光二极管性能的影响[J].发光学报,2017,38(1):85-90,6.基金项目
国家重点基础研究发展计划(973)(2015CB654605)资助项目Supported by National Key Basic Research Program(973)(2015CB654605) （973）
