机械与电子2017，Vol.35Issue(1)：23-26,31,5.
雷达微波功率管引脚失效仿真分析与优化
Simulation Analysis and Optimization of Pin Failure of a Radar Microwave Power Transistor
胡子翔 1王志海 2邓友银 1李悰2
作者信息
- 1. 中国电子科技集团公司第三十八研究所，安徽 合肥 230088
- 2. 国家级工业设计中心 中电38所，安徽 合肥 230088
- 折叠
摘要
Abstract
In this paper,mechanical simulation was applied to fault recurrence and failure mechanism analysis for pins’failure of a radar microwave power transistor in the temperature cycling test.It indicated that the major cause was the inappropriate connection type between foundation of the power transistor and cavity of the power amplifier,so that there was not enough cushion space to release thermal deformation and stress resulted from very different coefficient of thermal expansion.Under the premise of not changing the device materials,an improvement to the connection type was proposed by changing welding to screw fastening.The results of simulation and experiments showed that the solution was effective.关键词
微波功率管/热膨胀系数/失效分析/力学仿真Key words
microwave power transistor/coefficient of thermal expansion/failure analysis/mechanical simulation分类
信息技术与安全科学引用本文复制引用
胡子翔,王志海,邓友银,李悰..雷达微波功率管引脚失效仿真分析与优化[J].机械与电子,2017,35(1):23-26,31,5.
