物理化学学报2017，Vol.33Issue(1)：249-254,6.DOI:10.3866/PKU.WHXB201610142
基于CH3NH3PbI3单晶的Ta2O5顶栅双极性场效应晶体管
CH3NH3PbI3 Single Crystal-Based Ambipolar Field-Effect Transistor with Ta2O5 as the Top Gate Dielectric
摘要
关键词
钙钛矿/五氧化二钽/场效应/迁移率/光照Key words
Perovskite/Tantalum pentoxide/Field-effect/Mobility/Light illumination分类
化学化工引用本文复制引用
吕乾睿,李晶,廉志鹏,赵昊岩,董桂芳,李强,王立铎,严清峰..基于CH3NH3PbI3单晶的Ta2O5顶栅双极性场效应晶体管[J].物理化学学报,2017,33(1):249-254,6.基金项目
The project was supported by the National Natural Science Foundation of China (51173097,91333109),National Key Basic Research Program of China (2013CB632900),Tsinghua University Initiative Scientific Research Program,China (20131089202,20161080165),and Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,China (KF201516).国家自然科学基金(51173097,91333109),国家重点基础研究发展规划项目(2013CB632900),清华大学自主科研项目(20131089202,20161080165)和低维量子物理国家重点实验室开放基金(KF201516)资助 （51173097,91333109）
