液晶与显示2017，Vol.32Issue(1)：19-22,4.DOI:10.3788/YJYXS20173201.0019
ADS 模式低存储电容像素设计
Low storage capacitance pixel design of ADS mode
栗鹏 1朴正淏 1金熙哲 1金在光 1尚飞 1邱海军 1高文宝 1韩乾浩1
作者信息
- 1. 重庆京东方光电科技有限公司，重庆 400700
- 折叠
摘要
Abstract
Advanced Super Dimension Switch (ADS)is a type of wide view TFT-LCD technology and widely used in the commercial TV display in recent years.However,the high C st (capacitance storage) of ADS technology is the main restriction on Dual Gate GOA 4K TV.In order to maintain the same charging rate in smaller charging time,the pixel needs to reduce the C st .In this structure,the ADS structure is formed by the overlapping area between the pixel electrode and the common electrode,a coplanar conversion (IPS)structure is formed between the pixel electrode and the common electrode space.By reducing the pixel and common electrode overlap areas,the storage capacitor of ADS mode are decreased.The simulation results show that the pixel C st can drop 30% to 40%,when the Dual Slit ADS Design is used in ADS mode.The experimental results show that using the Low Cst Pixel ADS design,VGH Margin can be increased 2.5 V,but affected by the pixel electrode and the common electrode counterpoint,the transmittance will drop 5%.关键词
高级超维场转换技术/Dual Gate GOA/4K TV/存储电容/双条形电极Key words
ADS/dual gate GOA/4K TV/storage capacitance/dual slit分类
信息技术与安全科学引用本文复制引用
栗鹏,朴正淏,金熙哲,金在光,尚飞,邱海军,高文宝,韩乾浩..ADS 模式低存储电容像素设计[J].液晶与显示,2017,32(1):19-22,4.
