西安电子科技大学学报（自然科学版）2017，Vol.44Issue(1)：171-175,5.DOI:10.3969/j.issn.1001-2400.2017.01.030
MOCV D反应室流场分析及其对 GaN 生长的影响
Effect of reactor geometry on GaN in a vertical MOCVD reactor
摘要
Abstract
A simulation of the GaN growth in a vertical MOCVD reactor is presented . The results show that the gas phase transfer process in GaN growth and material quality of GaN are all affected by the reactor height and the rotation speed of the substrate . With the increasing rotation speed of the substrate , the flow field distribution in the M OCVD reactor becomes more uniform and stable , and the gas flow rate on the substrate surface and the GaN growth rate increase . The uniformity of the GaN is improved at the same time . But the growth rate will decrease when the rotation speed becomes too high . Under the same conditions , the flow field becomes more uniform and stable when the reactor height increases , which is helpful to improving the uniformity of the GaN material . And the growth rate decreases first and then increases in the same process;the gas phase reaction is enhanced at the same time .关键词
GaN/金属有机化合物CVD/反应室结构/反应动力学Key words
GaN/metal organic chemical vapor deposition/reactor structure/reaction kinetics分类
信息技术与安全科学引用本文复制引用
冯兰胜,过润秋,张进成..MOCV D反应室流场分析及其对 GaN 生长的影响[J].西安电子科技大学学报（自然科学版）,2017,44(1):171-175,5.基金项目
国家自然科学基金资助项目（61334002）；国家重大科技专项资助项目 （）
