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Recent advances in preparation, properties and device applications of two-dimensional h-BN and its vertical heterostructures

Huihui Yang Feng Gao Mingjin Dai Dechang Jia Yu Zhou Pingan Hu

半导体学报（英文版）2017，Vol.38Issue(3)：25-43,19.

半导体学报（英文版）2017，Vol.38Issue(3)：25-43,19.DOI:10.1088/1674-4926/38/3/031004

Recent advances in preparation, properties and device applications of two-dimensional h-BN and its vertical heterostructures

Huihui Yang ¹Feng Gao ²Mingjin Dai ³Dechang Jia ¹Yu Zhou ²Pingan Hu³

作者信息

1. Institute for Advanced Ceramics, Harbin Institute of Technology, Harbin 150001, China
2. Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Harbin 150080, China
3. School of Materials and Science Engineering, Harbin Institute of Technology, Harbin 150080, China
折叠

摘要

关键词

h-BN/heterostructures/graphene/van der Waals epitaxy/FETs

Key words

h-BN/heterostructures/graphene/van der Waals epitaxy/FETs

引用本文复制引用

Huihui Yang,Feng Gao,Mingjin Dai,Dechang Jia,Yu Zhou,Pingan Hu..Recent advances in preparation, properties and device applications of two-dimensional h-BN and its vertical heterostructures[J].半导体学报（英文版）,2017,38(3):25-43,19.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61390502,21373068),the National Basic Research Program of China (No.2013CB632900),the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (No.51521003),and the Self-Planned Task of State Key Laboratory of Robotics and System (No.SKLRS201607B). （Nos.61390502,21373068）

半导体学报（英文版）

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ISSN：1674-4926

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