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Manganese and chromium doping in atomically thin MoS2

Ce Huang Yibo Jin Weiyi Wang Lei Tang Chaoyu Song Faxian Xiu

半导体学报（英文版）2017，Vol.38Issue(3)：76-81,6.

半导体学报（英文版）2017，Vol.38Issue(3)：76-81,6.DOI:10.1088/1674-4926/38/3/033004

Manganese and chromium doping in atomically thin MoS2

Ce Huang ¹Yibo Jin ¹Weiyi Wang ¹Lei Tang ¹Chaoyu Song ¹Faxian Xiu¹

作者信息

1. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
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摘要

关键词

MoS2/field effect transistors/dilute magnetic semiconductors/two-dimensional materials

Key words

MoS2/field effect transistors/dilute magnetic semiconductors/two-dimensional materials

引用本文复制引用

Ce Huang,Yibo Jin,Weiyi Wang,Lei Tang,Chaoyu Song,Faxian Xiu..Manganese and chromium doping in atomically thin MoS2[J].半导体学报（英文版）,2017,38(3):76-81,6.

基金项目

Project supported by the National Young 1000 Talent Plan,the Pujiang Talent Plan in Shanghai,the National Natural Science Foundation of China (Nos.61322407,11474058,61674040),and the Chinese National Science Fund for Talent Training in Basic Science (No.J1103204). （Nos.61322407,11474058,61674040）

半导体学报（英文版）

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ISSN：1674-4926

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