半导体学报（英文版）2017，Vol.38Issue(3)：100-109,10.DOI:10.1088/1674-4926/38/3/033006
Progress of d0 magnetism in SiC
Progress of d0 magnetism in SiC
Yutian Wang 1Chenguang Liu 1Yuming Zhang1
作者信息
- 1. School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
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摘要
关键词
SiC/d0 magnetism/graphiteKey words
SiC/d0 magnetism/graphite引用本文复制引用
Yutian Wang,Chenguang Liu,Yuming Zhang..Progress of d0 magnetism in SiC[J].半导体学报（英文版）,2017,38(3):100-109,10.
