半导体学报（英文版）2017，Vol.38Issue(3)：116-119,4.DOI:10.1088/1674-4926/38/3/035001
A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology
A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology
Qin Ge 1Wei Liu 2Bo Xu 1Feng Qian 1Changfei Yao1
作者信息
- 1. Nanjing Electronic Devices Institute, Nanjing 210016, China
- 2. Air Force Military Representative Office in Jiangsu Province, Nanjing 210016, China
- 折叠
摘要
关键词
W-band/GaAs PHEMT/MMIC/wideband/power amplifierKey words
W-band/GaAs PHEMT/MMIC/wideband/power amplifier引用本文复制引用
Qin Ge,Wei Liu,Bo Xu,Feng Qian,Changfei Yao..A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology[J].半导体学报（英文版）,2017,38(3):116-119,4.
