发光学报2017，Vol.38Issue(3)：331-337,7.DOI:10.3788/fgxb20173803.0331
低阈值852nm半导体激光器的温度特性
Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers
摘要
Abstract
852 nm semiconductor laser was manufactured by metal organic chemical vapor deposition (MOCVD) and semiconductor subsequent technology.The threshold current of this laser was 57.5 mA,output spectral line width was less than 1 nm at room temperature.The impact of temperature on output optical power,threshold current,voltage,output centre wavelength was analyzed.When the temperature changes from 293 to 328 K,the characteristic temperature is 142.25 K,and the rates of the threshold current change and output light power are 0.447 mA/K and 0.63 mW/K,respectively.Ideal factor n is calculated to be 2.11,while the laser thermal resistance is calculated to be 77.7 K/W.The calculated center wavelength drift rate is 0.249 29 nm/K,corresponding well to the measured value in the experiment.Experimental results demonstrate that the relevant parameters of this laser are stable with the temperature ranging from 293 to 303 K.However,a temperature device is needed if a higher working temperature is required.关键词
852nm半导体激光器/温度特性/阈值电流/特征温度Key words
852 nm semiconductor laser/temperature characteristic/threshold current/characteristics of the temperature分类
信息技术与安全科学引用本文复制引用
廖翌如,关宝璐,李建军,刘储,米国鑫,徐晨..低阈值852nm半导体激光器的温度特性[J].发光学报,2017,38(3):331-337,7.基金项目
半导体激光器产业化技术基金(YXBGD20151JL01) （YXBGD20151JL01）
国家自然科学基金(61575008,60908012,61376049,61076044,61107026,61204011) （61575008,60908012,61376049,61076044,61107026,61204011）
北京市自然科学基金(4132006,4102003,4112006) （4132006,4102003,4112006）
北京市教育委员会基础技术研究基金(KM201210005004)资助项目 Supported by Semiconductor Laser Industrialization Technology Fund(YXBGD20151JL01) （KM201210005004）
National Natural Science Foundation of China(61575008,60908012,61376049,61076044,61107026,61204011) （61575008,60908012,61376049,61076044,61107026,61204011）
National Natural Science Foundation of Beijing city(4132006,4102003,4112006) （4132006,4102003,4112006）
Foundation Technology Research Fund of Beijing Municipal Education Commission(KM201210005004) （KM201210005004）
