红外与毫米波学报2017，Vol.36Issue(1)：1-5,29,6.DOI:10.11972/j.issn.1001-9014.2017.01.001
铜含量变化对Cu(In,Ga) Se2薄膜微结构的影响
Influence of various Cu contents on the microstructure of Cu (In, Ga) Se2 thin films
摘要
Abstract
The influence of different Cu contents (Cu/(Ga + In) =0.748 ～ 0.982) on the microstructure of Cu (In,Ga)Se2 (CIGS) thin films was reported.The CIGS thin films were grown via a two-step process including DC sputtering deposition of metallic precursor and following selenization.Presence of a series of chalcopyrite diffraction peaks in the X-Ray diffraction (XRD) patterns confirms the existence of chalcopyrite CIGS (CH-CIGS) phase in these CIGS films.The Raman spectra indicate that as the Cu content increases from low to high,the CIGS film sequentially goes through three phase regimes:coexistence of OVC and CH-CIGS phase,single CH-CIGS phase and coexistence of CuxSe and CH-CIGS phase.Moreover,the full width at half maximum of CIGS Raman peaks changes with Cu/(Ga + In) and reaches its minimum near Cu/(Ga + In) =0.9 due to better crystallinity and less disorder.Some empirical FWHM-Cu/(Ga + In) relationships were also observed.These results show that Raman spectroscopy is more sensitive to the microstructure of CIGS film than XRD,and can be used for preliminary estimation of the crystal phases and Cu content of CIGS film in a fast and non-destructive way.关键词
CIGS薄膜/铜含量/微结构/拉曼光谱Key words
CIGS thin films/Cu content/microstructure/raman spectra分类
信息技术与安全科学引用本文复制引用
孙雷,马建华,姚娘娟,黄志明,褚君浩..铜含量变化对Cu(In,Ga) Se2薄膜微结构的影响[J].红外与毫米波学报,2017,36(1):1-5,29,6.基金项目
Supported by National Natural Science Foundation of China (NSFC) (61006092),and the key incubation project of Shanghai Institute of Technical Physics (Chinese Academy of Science) （NSFC）
