红外与毫米波学报2017，Vol.36Issue(1)：6-9,34,5.DOI:10.11972/j.issn.1001-9014.2017.01.002
基于再生长欧姆接触工艺的220GHz InAlN/GaN场效应晶体管
fT =220 GHz InAlN/GaN HFETs with regrown ohmic contacts
摘要
Abstract
Scaled InAlN/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (fr) on sapphire substrate were fabricated and characterized.In this device,scaled source-to-drain distance (Lsd) of 600 nm was realized by metal organic chemical vapor deposition (MOCVD) based on regrow nonalloyed n +-GaN Ohmic contacts.Moreover,a 50 nm rectangular gate was fabricated by self-aligned-gate technology.A high drain saturation current density (Ids) of 2.11 A/mm@Vgs =1 V and a peak extrinsic transconductance (gm) of 609 mS/mm were achieved in the InAlN/GaN HFETs.In addition,from the small-signal RF measurements,the values offT and maximum oscillation frequency (fmax) for the device with 50-nm rectangular gate were extrapolated to be 220 GHz and 48 GHz.To our best knowledge,the value offT is the best reported one for InAlN/GaN HFETs in China.关键词
InAlN/GaN/HFET/fT/再生长n+-GaN欧姆接触Key words
InAlN/GaN/HFET/fT/regrown n +-GaN ohmic contacts分类
信息技术与安全科学引用本文复制引用
尹甲运,吕元杰,宋旭波,谭鑫,张志荣,房玉龙,冯志红,蔡树军..基于再生长欧姆接触工艺的220GHz InAlN/GaN场效应晶体管[J].红外与毫米波学报,2017,36(1):6-9,34,5.基金项目
Supported by the National Natural Science Foundation of China (61306113) （61306113）
