红外与毫米波学报2017，Vol.36Issue(1)：54-59,6.DOI:10.11972/j.issn.1001-9014.2017.01.011
HgCdTe器件中pn结结区扩展的表征方法
Characterization method of PN junction region expansion in HgCdTe device
摘要
Abstract
The laser beam induced current (LBIC) and the I-V test at liquid-nitrogen temperature were applied to characterize the PN junction region extension effect in the HgCdTe device processing.By LBIC and I-V test,it was found that the area of n-type region of p-type HgCdTe material implanted by Boron ion or etched by ion beam milling is larger than the nominal values.The transverse dimension of n-type region was measured.At the same time,it was found that the results obtained by both methods were comparable.关键词
HgCdTe/激光束诱导电流/I-V测试/B+离子注入/干法刻蚀Key words
HgCdTe/laser beam induced current/I-V test/Boron ion implantation/dry etching分类
信息技术与安全科学引用本文复制引用
翁彬,周松敏,王溪,陈奕宇,李浩,林春..HgCdTe器件中pn结结区扩展的表征方法[J].红外与毫米波学报,2017,36(1):54-59,6.基金项目
中国科学院国防科技创新基金项目(国防实验基金)National Defense Science and technology innovation fund of the Chinese Academy of Sciences (National defense experimental fund) （国防实验基金）
