人工晶体学报2017，Vol.46Issue(2)：193-196,4.
导模法生长高质量氧化镓单晶的研究
Growth of High Quality β-Ga2O3 Single Crystal by EFG Method
摘要
Abstract
High quality β-Ga2O3 single crystal with 25 mm in width and 100 mm in length were grown by edge-defined film-fed growth (EFG) method.The crystal apperance complete,colorless,no cracking.Powder X-ray diffraction demonstrated that the obtained crystal is β phase.High-resolution X-ray diffraction showed a full-width at half-maximum (FWHM) of the rocking curve of 93.6",indicating a high crystal quality.The ultraviolet absorption spectrum was investigated and the bandgap was estimated to be 4.77 eV.Furthermore,the effect of shouldering processing parameters on crystal quality was also discussed.关键词
氧化镓单晶/导模法/禁带宽度Key words
β-Ga2O3 single crystal/EFG method/bandgap分类
数理科学引用本文复制引用
贾志泰,穆文祥,尹延如,张健,陶绪堂..导模法生长高质量氧化镓单晶的研究[J].人工晶体学报,2017,46(2):193-196,4.基金项目
山东大学青年学者未来计划(2015WLJH36) （2015WLJH36）
光电材料与技术国家重点实验室开放课题(OEMT-2015-KF-06) （OEMT-2015-KF-06）
