无机材料学报2017，Vol.32Issue(2)：215-218,4.DOI:10.15541/jim20160250
物理气相输运法生长AlN六方微晶柱
Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method
摘要
Abstract
Hexagonal aluminium nitride (AlN) microrods with high crystalline quality were grown by physical vapor transport (PVT) method at low growth temperature between 1700 and 1850℃.The length of as-grown microrod is around 1 cm,and the width between 200-400 μm.The microrod exhibits typical hexagonal geometrical shape with pale yellow color under optical microscopy.Scanning electron microscope (SEM) and atomic force microscope (AFM) images show each microrod with closely arranged step waviness,of which the step interval is 2-4 μm and the height several nanometers.Raman spectrum characterization showed characteristic peaks of high crystalline AlN.The rod-like structure is attributed to slow growth velocity at lower crystalline temperature,enabling Al and N atoms having enough time to move to the lower energy site and to form hexagonal microrod along 〈0001〉 direction.High quality hexagonal AlN microrod is an enrichment to one-dimensional semiconductor materials.Data from this study suggest that,by further study on size and impurity control,high performance miniaturized opto-electronic device is hopeful to be achieved.关键词
Ⅲ-Ⅴ族半导体/氮化铝(AlN)晶体/六方微米柱/物理气相输运(PVT)Key words
Ⅲ-Ⅴ semiconductors/aluminum nitride/hexagonal microrod/physical vapor transport分类
数理科学引用本文复制引用
王华杰,刘学超,孔海宽,忻隽,高攀,卓世异,施尔畏..物理气相输运法生长AlN六方微晶柱[J].无机材料学报,2017,32(2):215-218,4.基金项目
National High-tech R&D program of China (863 Program,2014AA032602) （863 Program,2014AA032602）
National Key R&D program (2016YFB0400400)Shanghai Engineering Research Center of Single Crystal Silicon Carbide （2016YFB0400400）
