太赫兹科学与电子信息学报2016，Vol.14Issue(6)：953-960,8.DOI:10.11805/TKYDA201606.0953
纳米级CMOS集成电路的发展状况及辐射效应
Development of nano scale CMOS integrated circuit and its radiation effects
刘忠立1
作者信息
- 1. 中国科学院微电子研究所,北京 100029;中国科学院半导体研究所,北京 100083
- 折叠
摘要
Abstract
The development of Complementary Metal Oxide Semiconductor(CMOS) integrated circuit and the key technologies of nanometer scale CMOS integrated circuit are introduced. Based on this, the radiation effects and the current status of radiation hardening for nano scale CMOS integrated circuit are studied. The research shows that the nano scale FDSOICMOS integrated circuit bears a better radiation hardening ability than the same technology generation of bulk silicon CMOS integrated circuit, and it is especially suitable for the application of space technology.关键词
纳米级互补金属氧化物半导体集成电路/器件沟长/辐射效应Key words
nano scale Complementary Metal Oxide Semiconductor integrated circuit/device channel length/radiation effect分类
信息技术与安全科学引用本文复制引用
刘忠立..纳米级CMOS集成电路的发展状况及辐射效应[J].太赫兹科学与电子信息学报,2016,14(6):953-960,8.
