太赫兹科学与电子信息学报2016，Vol.14Issue(6)：972-976,5.DOI:10.11805/TKYDA201606.0972
一种抗辐射高压MOSFET驱动器的设计
A design of radiation hardening high-voltage MOSFET driver
王鹏 1徐青 1杭丽 1付晓君1
作者信息
- 1. 中国电子科技集团公司第24研究所,重庆 400060
- 折叠
摘要
Abstract
With the development of space technology and nuclear physics technology, the demand of high voltage power circuit is becoming stronger and stronger. A design of an anti-radiation high voltage Metal-Oxide-Semiconductor Field-Effect-Transistor(MOSFET) driver is presented. The circuit is designed based on 0.5 m BCD(namely Bipolar-Complementary Metal Oxide Semiconductor(CMOS)-Double-Diffused Metal-Oxide Semiconductor(DMOS) technique. The circuit adopts special structure and the layout design for radiation hardening the latch up effect, the field area and electrical parameters. The 300 krad(Si) is used for the design of the circuit. The working voltage of the circuit can reach 40V,and it is compatible with Transistor–Transistor Logic(TTL)/CMOS input. The output peak current is 1.5 A. It can be widely used in aerospace and nuclear physics experiments and other power driving parts.关键词
抗辐射加固/金属氧化物半导体场效应管驱动器/高压集成电路(IC)/双极-互补金属氧化物半导体-双重扩散金属氧化物半导体工艺Key words
radiation hardening/Metal-Oxide-Semiconductor Field-Effect-Transistor Driver/high- voltage Integrated Circuit/Bipolar-Complementary Metal Oxide Semiconductor-Double-Diffused Metal-Oxide/Semiconductor分类
信息技术与安全科学引用本文复制引用
王鹏,徐青,杭丽,付晓君..一种抗辐射高压MOSFET驱动器的设计[J].太赫兹科学与电子信息学报,2016,14(6):972-976,5.
