硅酸盐学报2017，Vol.45Issue(4)：467-471,5.DOI:10.14062/j.issn.0454-5648.2017.04.01
铁酸铋薄膜的阻变效应和导电机制
Resistive Switching Effect and Conduction Mechanism of BiFeO3 Thin Films
摘要
Abstract
The resistive switching behavior of BiFeO3 thin film prepared via pulsed laser deposition was investigated. The current-voltage (I-V) curves were measured at different voltages. The resistance changes from high value to low value at a positive voltage, and the resistance changes from low value to high value at a negative voltage. The space charge limited conduction mechanism was analyzed through the fitting of the I-V curves. The resistive effect is attributed to the electric filed induced carrier trapping and detrapping, which results in the variation of the Schottky barrier height at the interface between the film and the electrode.关键词
阻变效应/导电机制/陷阱填充与脱陷/空间电荷限制电流Key words
resistive effect/conduction mechanism/trapping and detrapping/space charge limited conduction分类
通用工业技术引用本文复制引用
朱慧,张迎俏,汪鹏飞,白子龙,孟晓,陈月圆,祁琼..铁酸铋薄膜的阻变效应和导电机制[J].硅酸盐学报,2017,45(4):467-471,5.基金项目
国家自然科学基金(61201046,61306057) （61201046,61306057）
北京市自然科学基金(4162013,2132023) （4162013,2132023）
北京市博士后工作经费资助项目(2015ZZ-33) （2015ZZ-33）
北京市教委科技计划一般项目(KM201610005005) （KM201610005005）
教育部留学回国人员科研启动基金. （）
