硅酸盐学报2017，Vol.45Issue(4)：472-477,6.DOI:10.14062/j.issn.0454-5648.2017.04.02
射频反应磁控溅射制备的SnO2及SnO2:F薄膜结构与透明导电性能
Structure and Transparent Conductive Properties of SnO2 and SnO2:F Films Deposited by RF Reactive Magnetron Sputtering
摘要
Abstract
SnO2 and SnO2:F thin films with a thickness of approximately 300nm were deposited via radio frequency(RF) reactive magnetron sputtering at different O2 fluxes at 150℃ with Sn and Sn+SnF2 as targets. The structure and transparent conductive properties of SnO2 and SnO2:F films were investigated by X-ray diffraction, the Hall effect measurement system and UV-Vis spectrophotometry. The results show that SnO2 films show a transition from amorphous to polycrystalline and the preferred orientation of crystalline films gradually transform from (101) plane to (211) plane as O2 flux increases. The resistivity of SnO2 films firstly decreases and then increases while their average transmittance increases gradually with increasing O2 flux. The changes of structure and transparent conductive properties with O2 flux in SnO2:F films are similar to those in SnO2 films. However, the preferred orientation of SnO2:F films shows (002), (101) and (211) plane. Furthermore, the carrier concentration and mobility of SnO2:F films increase because of F doping, thus decreasing the film resistivity. Also, the average transmittance of the films increases because of F doping. The SnO2:F film has a minimum resistivity of 4.16×10-3Ω·cm and an average transmittance of 86.5% at a proper O2 flux.关键词
射频反应磁控溅射/氧化锡薄膜/氟掺杂/氧气流量/透明导电性能Key words
radio frequency reactive magnetron sputtering/tin oxide thin film/fluorine doping/oxygen flux/transparent conductive properties分类
信息技术与安全科学引用本文复制引用
杨玉婷,祝柏林,谢挺,张俊峰,吴隽,甘章华,刘静..射频反应磁控溅射制备的SnO2及SnO2:F薄膜结构与透明导电性能[J].硅酸盐学报,2017,45(4):472-477,6.基金项目
材料成形与模具技术国家重点实验室开放基金课题(P2014-06). （P2014-06）
