硅酸盐学报2017，Vol.45Issue(4)：548-552,5.DOI:10.14062/j.issn.0454-5648.2017.04.14
光学浮区法生长掺铟氧化镓单晶及其性能
Growth and Properties ofβ-Ga2O3:In Single Crystal by Optical Floating Zone Method
摘要
Abstract
β-Ga2O3:In single crystal with 30?35mm in length and 7?9mm in diameter was grown by an optical floating zone method. Based on the X-ray diffraction analysis,β-Ga2O3:In single crystal obtained belongs to a monoclinic crystal system. The absorption spectra and electric properties ofβ-Ga2O3:In crystal doped with different mole fractions of In3+ were investigated. The results indicate that compared to pureβ-Ga2O3 crystal,β-Ga2O3:In single crystal has an intense absorption in the infrared band. The conductivity ofβ-Ga2O3:In single crystal is above 10-2 S/cm, and the carrier density can achieve 6×1019/cm2. It is indicated that the doping of In3+ could improve the electrical properties of theβ-Ga2O3 single crystal.关键词
铟掺杂氧化镓单晶/晶体生长/浮区法Key words
In-doped gallium oxide single crystal/crystal growth/optical floating zone method分类
数理科学引用本文复制引用
吴庆辉,唐慧丽,苏良碧,罗平,钱小波,吴锋,徐军..光学浮区法生长掺铟氧化镓单晶及其性能[J].硅酸盐学报,2017,45(4):548-552,5.基金项目
国家自然科学基金项目(91333106) （91333106）
上海科委科技攻关项目(13521102700) （13521102700）
上海蓝宝石单晶工程技术研究中心(筹)(14DZ2252500)资助项目 （筹）
中央高校基本科研业务费专项资金项目(2015KJ040,1370219229). （2015KJ040,1370219229）
