光学精密工程2017，Vol.25Issue(3)：597-602,6.DOI:10.3788/OPE.20172503.0597
基于薄膜退火的MoS2/SiO2/Si异质结太阳能电池光伏性能提高
Enhancement of photovoltaic performance of MoS2/SiO2/Si heterojunction solar cells by film annealing
摘要
Abstract
MoS2 thin films were prepared using magnetron sputtering technology and annealed in sulfur surrounding.Then,MoS2/SiO2/Si heterojunction solar cells were fabricated with annealed and unannealed MoS2 thin films respectively.The effects of annealing on the microstructure of MoS2 thin films and the photovoltaic performance of MoS2/SiO2/Si heterojunction solar cells were investigated.Compared with the unannealed MoS2 thin film,the full width at half maximum (FWHM of Raman peaks of the annealed MoS2 thin film becomes narrower,the peak intensities are stronger,and excitonpeaks are emerged in microscopic PL spectrum.The results indicate that the MoS2 films transformed from amorphous to crystalline by annealing and bulk defects in films were reduced,which can increase the open-circuit voltage and the fill factor as well as the conversion efficiency (from 0.94 ％ to 1.66％) of the devices.The variable intensity J-V measurements and the dark J-V measurements demonstrate that the annealed MoS2/SiO2/Si heterojunction solar cells have higher collection voltage and ideality factor n nearly close to 1,which due to the decrease of the bulk defects density of the MoS2 thin films as well as the decline of the defects recombination of the device leaded by annealing.关键词
太阳能电池/MoS2薄膜/退火/光伏性能Key words
solar cells/MoS2 thin film/annealing/photovoltaic performances分类
信息技术与安全科学引用本文复制引用
许贺菊,张彬,张瑜,丛日东,于威..基于薄膜退火的MoS2/SiO2/Si异质结太阳能电池光伏性能提高[J].光学精密工程,2017,25(3):597-602,6.基金项目
国家自然科学基金青年基金资助项目(No.61504036) （No.61504036）
河北省自然科学基金青年基金资助项目(No.A2016201087) （No.A2016201087）
河北省高等学校科学研究指导项目(No.Z2015121) （No.Z2015121）
河北省科技计划资助项目(No.13214315) （No.13214315）
教育部博士点基金资助项目(No.20131301120003) （No.20131301120003）
河北省高等学校科技研究项目(No.QN20131115) （No.QN20131115）
