控制理论与应用2017，Vol.34Issue(1)：1-12,12.DOI:10.7641/CTA.2017.60247
直拉硅单晶生长过程建模与控制研究综述
A review of growth process modeling and control of Czochralski silicon single crystal
摘要
Abstract
Silicon single crystal is one of the most important materials of semiconductor. More than 90% of semi-conductor devices and integrated circuit chips are made of silicon single crystal. As the rapid development of integrated circuit technique, the quality of silicon single crystal is being concerned much more than before. Czochralski method is the main method of silicon single crystal production, therefore, its scientific principle and method, growth technique and technology, as well as control strategy and method have always been a hot research topic in both academia and industry. For growth process of electronic-grade silicon single crystal by Czochralski method, based on basic principle of crystal growth, this paper fully describes growth modeling, variables detection, control method, and so on. Especially for the demand of silicon single crystal with large size and high quality nowadays, the main research achievements and current problems are summarized. The research ideas and methods are put forward correspondingly.关键词
直拉硅单晶/过程建模/变量检测/过程控制/控制策略Key words
Czochralski silicon single crystal/process modeling/variables detection/process control/control strategy分类
信息技术与安全科学引用本文复制引用
刘丁,赵小国,赵跃..直拉硅单晶生长过程建模与控制研究综述[J].控制理论与应用,2017,34(1):1-12,12.基金项目
国家自然科学基金重点项目(61533014) （61533014）
国家重点基础研究发展计划("973"计划)(2014CB360508) （"973"计划）
陕西省科技统筹创新工程计划(2016 KTZDGY-03-03)资助. Supported by Key Program of National Natural Science Foundation of China (61533014) （2016 KTZDGY-03-03）
National Basic Research Program of China (2014CB 360508) and Shaanxi Science&Technology Co-ordination&Innovation Project (2016KTZDGY-03-03). （2014CB 360508）
