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InGaAs/AlGaAs量子阱红外探测器中势垒生长温度的研究

霍大云 石震武 张伟 唐沈立 彭长四

物理学报2017,Vol.66Issue(6):371-378,8.
物理学报2017,Vol.66Issue(6):371-378,8.DOI:10.7498/aps.66.068501

InGaAs/AlGaAs量子阱红外探测器中势垒生长温度的研究

Barrier growth temp erature of InGaAs/AlGaAs-quantum well infrared photo detector

霍大云 1石震武 1张伟 1唐沈立 1彭长四1

作者信息

  • 1. 苏州大学光电信息科学与工程学院/苏州纳米科技协同创新中心, 苏州 215006
  • 折叠

摘要

Abstract

The InGaAs/AlGaAs quantum wells have been extensively applied to quantum well infrared photodetector of mid-wavelength. In this letter, four samples of 2.4 nm In0.35Ga0.65As/40 nm Al0.34Ga0.66As multi-quantum wells are grown by molecular beam epitaxy with the InGaAs wells growing all at a temperature of 465 ℃℃ but the AlGaAs wells growing at temperatures of 465 ℃, 500 ℃, 545 ℃, and 580 ℃ respectively. The dependence of InGaAs quantum well strain relaxation on the AlGaAs growth temperature is systematically studied by photoluminescence spectroscopy and X-ray diffraction and then the thermal-induced relaxations of three key-stages are clearly observed in the following temperature ranges. 1) 465–500 ℃ for the stage of elastic relaxation: the phase separation begins to take place with a low defect density;2) 500–545 ℃ for the transition stage from elastic relaxation to plastic relaxation: the phase separation will be further intensified with defect density increasing; 3) 545–580 ℃ for the fast stage dominated by elastic relaxation and the defect density will sharply increase. Especially when AlGaAs temperature increases to 580 ℃, a very serious plastic relaxation will take place and the InGaAs quantum well will be dramatically destroyed.

关键词

中波红外探测/量子阱红外探测器件/InGaAs/AlGaAs多量子阱/温致弛豫

Key words

mid-infrared detection/quantum well infrared photodetector/InGaAs/AlGaAs multi-quantum wells/thermal-induced relaxation

引用本文复制引用

霍大云,石震武,张伟,唐沈立,彭长四..InGaAs/AlGaAs量子阱红外探测器中势垒生长温度的研究[J].物理学报,2017,66(6):371-378,8.

基金项目

国家自然科学基金(批准号:11504251)、江苏高校优势学科建设工程、科技部国际合作项目(批准号:2013DFG12210)、江苏省高校自然科学研究重大项目(批准号:12 KJA140001)和江苏省普通高校研究生科研创新计划(批准号:KYLX15_1252)资助的课题. Project supported by the National Natural Science Foundation of China (Grant No. 11504251), the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), China, the International Cooperation Project by MOST, China (Grant No. 2013DFG12210), the Natural Science Research Project of Jiangsu Higher Education, China (Grant No. 12KJA140001), and the Post-graduate Innovation Project of Jiangsu Higher Education, China (Grant No. KYLX15_1252). (批准号:11504251)

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

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