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Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films

Dainan Zhang Tianlong Wen Ying Xiong Donghong Qiu Qiye Wen

纳微快报（英文）2017，Vol.9Issue(3)：74-81,8.

纳微快报（英文）2017，Vol.9Issue(3)：74-81,8.DOI:10.1007/s40820-017-0132-x

Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films

Dainan Zhang ¹Tianlong Wen ²Ying Xiong ¹Donghong Qiu ¹Qiye Wen¹

作者信息

1. State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
2. Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USA
折叠

摘要

关键词

Al2O3/Buffer layers/Atomic layer deposition/VO2 thin films/Heterostructure

Key words

Al2O3/Buffer layers/Atomic layer deposition/VO2 thin films/Heterostructure

引用本文复制引用

Dainan Zhang,Tianlong Wen,Ying Xiong,Donghong Qiu,Qiye Wen..Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films[J].纳微快报（英文）,2017,9(3):74-81,8.

基金项目

This work was financially supported by the National Natural Science Foundation of China (Nos. 51401046, 51572042, 61131005, 61021061, and 61271037) （Nos. 51401046, 51572042, 61131005, 61021061, and 61271037）

International Cooperation Projects (Nos. 2013HH0003 and 2015DFR50870) （Nos. 2013HH0003 and 2015DFR50870）

the 111Project (No. B13042) （No. B13042）

the Sichuan Province S&T program (Nos. 2014GZ0003, 2015GZ0091, and 2015GZ0069) （Nos. 2014GZ0003, 2015GZ0091, and 2015GZ0069）

Fundamental Research Funds for the Central Universities （）

and the start-up fund from the University of Electronic Science and Technology of China. （）

纳微快报（英文）

OAEISCI

ISSN：2311-6706

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