液晶与显示2017，Vol.32Issue(2)：91-96,6.DOI:10.3788/YJYXS20173202.0091
搭桥晶粒多晶硅薄膜晶体管栅交流电应力下的退化行为与退化机制研究
Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress
摘要
Abstract
Degradation behavior and degradation mechanism of bridged-grain (BG) polycrystalline silicon thin film transistors (TFTs) under AC gate bias stress are studied and investigated.It is found that dynamic hot carrier (HC) effect dominates the device degradation.The degradation is only related to gate pulse falling time (tf).Faster tf brings larger dynamic HC degradation.Compared with normal poly-Si TFTs,the dynamic HC degradation of BG poly-Si TFTs under the same stress is greatly reduced.By selectively doping the active channel,the multiple PN junctions inherent can effectively share the voltage drop,resulting in better dynamic HC reliability.Based on transient simulations,the related degradation mechanism is clarified.All test results indicate that such high-performance and highly reliable BG poly-Si TFTs have great potential in system-on-panel applications.关键词
搭桥晶粒/多晶硅/薄膜晶体管/栅交流应力/动态热载流子Key words
bridged-grain/polycrystalline silicon/thin film transistors/AC gate bias stress/dynamic hot carrier分类
信息技术与安全科学引用本文复制引用
张猛,夏之荷,周玮,陈荣盛,王文,郭海成..搭桥晶粒多晶硅薄膜晶体管栅交流电应力下的退化行为与退化机制研究[J].液晶与显示,2017,32(2):91-96,6.基金项目
香港研究资助局主题研究计划项目(NO.T23-713/11-1) Supported by the Hong Kong Government Research Grants Council Theme-Based Research Scheme under Grant T23-713/11-1. （NO.T23-713/11-1）
