首页|期刊导航|半导体学报（英文版）|Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film
半导体学报（英文版）2017，Vol.38Issue(4)：23-26,4.DOI:10.1088/1674-4926/38/4/043002
Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film
Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film
摘要
关键词
silicon oxynitride/resistive random access memory/oxygen concentrationKey words
silicon oxynitride/resistive random access memory/oxygen concentration引用本文复制引用
Da Chen,Shihua Huang,Lü He..Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film[J].半导体学报（英文版）,2017,38(4):23-26,4.基金项目
Project supported by the Natural Science Foundation of Zhejiang Province (No.LY17F040001),the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No.KF2015_02),the Open Project Program of National Laboratory for Infrared Physics,Chinese Academy of Sciences (No.M201503),the Zhejiang Provincial Science and Technology Key Innovation Team (No.2011R50012),and the Zhejiang Provincial Key Laboratory (No.2013E10022). （No.LY17F040001）
