材料科学与工程学报2017，Vol.35Issue(2)：173-176,186,5.DOI:10.14136/j.cnki.issn 1673-2812.2017.02.001
硼掺杂球磨SiGe合金的热电性能
Thermoelectric Properties of Boron Doped SiGe Alloys by Ball Milling
摘要
Abstract
SiGe alloy based thermoelectric(TE) materials have attracted widely attention for decades as a kind of traditional high temperature TE materials.In this study,p-type B doped SiGe alloys were prepared by ball milling.B doping effectively increases the carrier concentration and optimizes the electrical properties.Lattice thermal conductivity of the material is reduced by the enhanced boundary scattering which is caused by the reduced grain sizes due to ball milling.In addition,lattice thermal conductivity of the material is further reduced due to the point defect scattering and carrier-phonon scattering caused by doping.At room temperature,the thermal conductivity of Si0.8 Ge0.2 B0.04 is ～ 4Wm-1 K 1.Due to the improvement of the electrical transport properties and the decreased thermal conductivity,the figure of merit zT is improved.The maximum figure of merit zT reaches 0.42 for the sample Si0.8Ge0.2B0.04 at 850K,2.5 times higher than that of Si0.8 Ge0.2 B0.002.关键词
热电材料/SiGe合金/硼掺杂/晶粒优化Key words
TE materials/SiGe alloy/boron doping/grain-refined分类
通用工业技术引用本文复制引用
徐璟,赵新兵,朱铁军,何旭昭..硼掺杂球磨SiGe合金的热电性能[J].材料科学与工程学报,2017,35(2):173-176,186,5.基金项目
教育部博士点基金资助项目(20120101110082) （20120101110082）
