材料科学与工程学报2017，Vol.35Issue(2)：177-180,4.DOI:10.14136/j.cnki.issn 1673-2812.2017.02.002
非晶ZnTiSnO薄膜的溶液燃烧法制备与TFT器件性能
Combustion-Solution Processed Amorphous ZnTiSnO Thin Films and Performances as Thin-Film Transistors
摘要
Abstract
Amorphous ZnTiSnO (ZTTO) thin films were prepared by the combustion-solution method at low temperatures.Thin-film transistors (TFTs) were fabricated using the ZTTO film as the channel layer.The effects of introduced Ti on the film properties (e.g.,structural and optical properties and chemical states of elements) and device behavior of the TFTs were investigated in detail.The results show that all films are in an amorphous state and display a high average transmittance over 84％ in the visible light region.A moderate Ti content in the matrix can act as carrier inhibitor to effectively reduce the density of oxygen vacancy defects,and so the TFT behaviors are improved.When the molar ratio of Zn/Ti is 30/1,the ZTTO TFTs exhibit acceptable performances with an on/off current ratio of 3.54 × 105.关键词
溶液燃烧法/ZnTiSnO薄膜/非晶态/薄膜晶体管Key words
Combustion-solution method/ZnTiSnO film/Amorphous state/Thin-film transistor分类
信息技术与安全科学引用本文复制引用
冯丽莎,江庆军,叶志镇,吕建国..非晶ZnTiSnO薄膜的溶液燃烧法制备与TFT器件性能[J].材料科学与工程学报,2017,35(2):177-180,4.基金项目
国家自然科学基金资助项目(51372002) （51372002）
