发光学报2017，Vol.38Issue(4)：507-513,7.DOI:10.3788/fgxb20173804.0507
氧化锌作为电子传输层的量子点发光二极管
Quantum Dot Light Emitting Diodes with ZnO Electron Transport Layer
摘要
Abstract
In order to reduce the turn on voltage and improve the performance of QLED, ZnO film with good electronic transmission property was used as electron transport layer.The structure of the sample was ITO/PEDOT∶PSS/Poly-TPD/QDs/ZnO.The models of Folwer-Nordheim tunneling injection and space-charge limited current were employed to analyze the injection current density in QDs layer.The results show that the optimal thickness of poly-TPD is confirmed to 40 nm when ZnO thickness is fixed of 50 nm, and the injection carriers in QDs layer can reach a certain balance.By measuring the current density-voltage-luminance-luminous efficiency of QLED, the influences of hole transport layer thickness on the device performance were studied.Experiment results show that the device with a hole transport layer of 40 nm has the best performances than the other devices, of which the turn on voltage is 1.7 V, the maximum lumious efficiency is 1.18 cd/A, and the maximum brightness can reach 5 225 cd/m2 under the voltage of 9 V.关键词
量子点发光二极管/隧穿注入/空间电荷限制电流/电流密度/亮度/电流效率Key words
quantum dot light emitting diode/tunneling injection/space-charge limited current/current density/luminance/current efficiency分类
信息技术与安全科学引用本文复制引用
马航,李邓化,陈雯柏,叶继兴..氧化锌作为电子传输层的量子点发光二极管[J].发光学报,2017,38(4):507-513,7.基金项目
国家重点基础研究发展计划(973)(2015CB654605)资助项目 Supported by National Basic Research Program of China(973)(2015CB654605) （973）
