硅酸盐学报2017，Vol.45Issue(3)：360-365,6.DOI:10.14062/j.issn.0454-5648.2017.03.06
V2O5掺杂对ZnO–Pr6O11基压敏电阻微观结构和电学性能的影响
Microstructure and Electrical Properties of V2O5-doped ZnO–Pr6O11 Ceramics
摘要
Abstract
The microstructure and electrical properties of V2O5-doped ZnO–Pr6O11 ceramics were investigated. As the amount of V2O5 increases, the breakdown field firstly increases from 1068to 1099V/mm,and then decreases to 937V/mm. The varistor ceramics doped with the amount V2O5 of 1.0% (mole fraction) exhibit the optimum breakdown field, impedance and relative dielectric constant, as well as the minimum loss tangent value (tanδ). The varistor ceramics doped with the of V2O5 amount of 1.5% show the optimum nonlinear coefficient (α) of 47.7, and the least leakage current (JL) of 0.74μA/cm2. The results indicate that V2O5 doping has a dominant effect on the performance, the ceramics presents the superior performance, especially at the high breakdown voltage. The ceramics have a promising application potential in the electrical equipment resistant to lightning.关键词
五氧化二钒掺杂/氧化锌压敏电阻/微观结构/电学性能Key words
vanadium pentoxide doped/zinc oxide varistor/microscopic structure/electrical properties分类
化学化工引用本文复制引用
刘建科,崔永宏,陈永佳,韩晨,范亚红..V2O5掺杂对ZnO–Pr6O11基压敏电阻微观结构和电学性能的影响[J].硅酸盐学报,2017,45(3):360-365,6.基金项目
国家自然科学基金(51272145,50972087)资助. （51272145,50972087）
