人工晶体学报2017，Vol.46Issue(3)：439-444,6.
基于暗I-V特性曲线对晶硅电池杂质和缺陷性质研究
Properties of Impurites and Defects in Crsystalline Silicon Solar Cell Based on the Dark I-V Characteristic Curves
摘要
Abstract
The dark I-V characteristic curve is an effective method to monitor the impurities and defects in the crystalline silicon solar cells.The influence of the properties of impurities and defects on the dark I-V characteristic curve has been systematically discussed by finite difference method, and the basic criteria for determining the type and distribution of impurities and defects in the crystalline silicon solar cells by the dark I-V characteristic curve is given, the results show that the obvious change of the dark I-V characteristic curve can be considered to be caused by the impurities and defects in the silicon solar cell under the forward bias conditions which voltage is greater than 0.75 V;the partition properties of the ideal factor of the dark I-V characteristic curve can be used as the basis of the bulk and surface impurities and defects of the crystalline silicon solar cell under the forward bias conditions which voltage is between 0.1V and 0.75 V.关键词
晶硅电池/暗I-V特性曲线/理想因子/杂质/缺陷Key words
crystalline silicon cell/dark I-V characteristic curve/ideal factor/impurity/defect分类
信息技术与安全科学引用本文复制引用
宋扬,陆晓东,王泽来,赵洋,吕航,张宇峰..基于暗I-V特性曲线对晶硅电池杂质和缺陷性质研究[J].人工晶体学报,2017,46(3):439-444,6.基金项目
国家重点基础研究发展计划("973"计划)(2010CB933804) （"973"计划）
国家自然科学基金(61575029,11304020) （61575029,11304020）
