西华大学学报（自然科学版）2017，Vol.36Issue(2)：43-49,7.DOI:10.3969/j.issn.1673-159X.2017.02.09
Bi掺杂SrTiO3陶瓷缺陷结构模拟及介电性能研究
Study on Defect Structure Atomistic Simulation and Dielectric Properties of Bi Doped SrTiO3 Ceramics
摘要
Abstract
Sr1-xBixTiO3 ceramics were prepared by conventional solid state reaction.The dielectric properties,defect structure and defect dipoles of SrTiO3 ceramics doped with Bi were investigated.The crystal structure were characterized by X-ray diffraction (XRD).The results show that the second phase does not occur in doping range.Obtained by the General Utility Lattice Program,the stable defect dipoles are [2 Bier + VSr″]、[Vo..+ VSr″]、[2Vo..+ VTi″″] and [Vo..+ 2 TiTi′].The results suggest that all the dielectric relaxations are related to the thermally activated process by following Arrhenius law.With the content of Bi increasing,the relaxation activation energy of the peaks of dielectric loss increases and the degree of dielectric relaxation decreases.关键词
SBT陶瓷/介电性能/极化机制/缺陷偶极子/GULP模拟Key words
Sr1-xBixTiO3 ceramics/dielectric properties/polarization mechanism/defect dipoles/GULP atomistic simulation分类
信息技术与安全科学引用本文复制引用
肖鹏,丁士华,胡龙虎,彭小松,张瑶,刘杨琼..Bi掺杂SrTiO3陶瓷缺陷结构模拟及介电性能研究[J].西华大学学报（自然科学版）,2017,36(2):43-49,7.基金项目
西华大学研究生创新基金(ycjj2015113 （）
ycjj2015217 （）
ycjj2015218). （）
