无机材料学报2017，Vol.32Issue(4)：437-442,6.DOI:10.15541/jim20160456
MBE技术蓝宝石衬底上生长VO2薄膜及其太赫兹和金属-绝缘体相变特性研究
Terahertz and Metal-insulator Transition Properties of VO2 Film Grown on Sapphire Substrate with MBE
摘要
Abstract
High quality stoichiometric VO2 films were grown on single crystal sapphire substrates by molecular beam epitaxy (MBE),the film thicknesses were precisely controlled on the nanoscale ranging from 15 nm to 60 nm.For the optimized sample,a distinct reversible metal-insulator transition (MIT) with abrupt resistance change more than four orders of magnitude was observed,which was comparable to the ever reported result for high quality single crystal VO2.Especially,the optical properties in the terahertz (THz) frequency range were characterized with THz time-domain spectroscopy (THz-TDs)measurements for samples with various thicknesses,and the results indicate that the THz properties of VO2 film was significantly affected by the thickness.Therefore,the thickness should to be precisely controlled to obtain reproducible and reliable performance.The THz devices based on VO2 film may benefit significantly from these achievements.关键词
二氧化钒薄膜/太赫兹时域光谱/分子束外延/金属-绝缘体相变Key words
vanadium dioxide film/terahertz time-domain spectroscopy (THz-TDs)/molecular beam epitaxy (MBE)/metal-insulator transition分类
通用工业技术引用本文复制引用
孙洪君,王敏焕,边继明,苗丽华,章俞之,骆英民..MBE技术蓝宝石衬底上生长VO2薄膜及其太赫兹和金属-绝缘体相变特性研究[J].无机材料学报,2017,32(4):437-442,6.基金项目
Fundamental Research Funds for the Central Universities (DUT16LAB11) （DUT16LAB11）
Opening Project of Key Laboratory of Inorganic Coating Materials,Chinese Academy of Sciences (KLICM-2014-01) （KLICM-2014-01）
