太赫兹科学与电子信息学报2017，Vol.15Issue(2)：297-301,5.DOI:10.11805/TKYDA201702.0297
一种高精确度低功耗无片外电容LDO设计
A high precision low powercapacitor-less Low Dropout Regulator
摘要
Abstract
A full on chip high precision low power capacitor-less Low Dropout Regulator(LDO) is presented. The circuit realizes high precision by using a high-order curvature compensated bandgap circuit. The power consumption is effectively decreased by using a zero power start-up circuit. In addition, 4 transistors are utilized to enhance slew rate which is good for low power consumption. The circuit was simulated in CSMC 0.5μm CMOS process. By simulation with Spectre, the circuit achieves an output voltage of 3.3 V, aline regulation less than 0.3 mV/V, a load regulation less than 0.09 mV/mA, a temperature coefficient of 10 ppm/℃ in the temperature range from -40℃ to 150℃.The total LDO circuit consumes 17.7μA.关键词
低压差线性稳压器/带隙基准电压源/高精确度/低功耗Key words
Low Dropout Regulator/bandgap voltage reference/high precision/low power consumption分类
信息技术与安全科学引用本文复制引用
周梦嵘,段杰斌,谢亮,金湘亮..一种高精确度低功耗无片外电容LDO设计[J].太赫兹科学与电子信息学报,2017,15(2):297-301,5.基金项目
国家自然科学基金资助项目(61274043 （）
61233010) （）
湖南省自然科学杰出青年基金资助项目(2015JJ1014) （2015JJ1014）
