太赫兹科学与电子信息学报2017，Vol.15Issue(2)：302-306,5.DOI:10.11805/TKYDA201702.0302
基于TSV工艺的三维FPGA热分析
Thermal analysis for 3-D FPGA with TSV technology
黄俊英 1张超 2林郁 1孙嘉斌 1杨海钢1
作者信息
- 1. 中国科学院 电子学研究所,北京100190
- 2. 中国科学院大学,北京 100190
- 折叠
摘要
Abstract
To explore the factors affecting the temperature of the three dimensional Field Programmable Gate Array(FPGA) chip,a finite element simulation model targeted three dimensional FPGA is proposed. First,the model is constructed using commercial software Flotherm based on Through Silicon Via(TSV),micro bump,flip chip eutectic bump,interposer,Ball Grid Array(BGA) solder ball and PCB. Then,the model is adopted to analyze the temperature of the three dimensional FPGA chip with different numbers of TSVs and stacking layers from qualitative and quantitative point of view. It is found that the average temperature increases from the bottom chip to the top chip,and the average temperature of each layer increases with the decrease of the number of TSVs and the increase of the number of stacking layers. The experimental results are consistent with the results published in the literature, indicating the feasibility of the proposed simulation model in the analysis of the parameters influencing the temperature of the chip.关键词
三维现场可编程门阵列/有限元模型/硅通孔/堆叠层数Key words
3-D Field Programmable Gate Array/finite element model/Through Silicon Via/stacking layers分类
信息技术与安全科学引用本文复制引用
黄俊英,张超,林郁,孙嘉斌,杨海钢..基于TSV工艺的三维FPGA热分析[J].太赫兹科学与电子信息学报,2017,15(2):302-306,5.
