液晶与显示2017，Vol.32Issue(4)：265-268,4.DOI:10.3788/YJYXS20173204.0265
感应耦合等离子体干法刻蚀中光刻胶异常变性的改善
Improvement of photoresist abnormal degeneration in inductively coupled plasma etch
徐纯洁 1张福刚 1崔立加 1张雪峰 1徐浩 1刘日久 1李根范 1王世凯 1郑载润1
作者信息
- 1. 合肥鑫晟光电科技有限公司,安徽 合肥 230011
- 折叠
摘要
Abstract
Comparing with the degenerated map of photoresist with substrate under different condition of inductively coupled plasma(ICP)etch recipe,this article explored the relationship between the degeneration of photoresist and the structure of electrode.Research results showed that the edge of electrode,which we called Dam Area,has poor cooling performance,thus leading to much more possibility of degeneration.We also developed an optimized Dam structure of electrode that can be used to enhance the cooling performance of the substrate,and solved the degeneration issue.关键词
感应耦合等离子体/干法刻蚀/下部电极/光刻胶/湿法去胶Key words
inductively coupled plasma/dry etch/low electrode/photoresist/wet strip分类
信息技术与安全科学引用本文复制引用
徐纯洁,张福刚,崔立加,张雪峰,徐浩,刘日久,李根范,王世凯,郑载润..感应耦合等离子体干法刻蚀中光刻胶异常变性的改善[J].液晶与显示,2017,32(4):265-268,4.
