表面技术2017，Vol.46Issue(3)：157-164,8.DOI:10.16490/j.cnki.issn.1001-3660.2017.03.024
TiB2掺杂对316L不锈钢厚膜电阻抗氧化性能的影响
Effect of TiB2 Doping on Oxidation Resistance of 316L Stainless Steel Thick-film Resistor
摘要
Abstract
Thick film resistor is increasingly applied to electrothermal films,but oxidation resistance of thick film resistor on the surface of porous ceramic substrate was seldom studied.The oxidation resistance of stainless steel thick-film resistor at 400 ℃,500℃,600℃ and 700 ℃ was studied by doping TiB2 ceramic powder.The phase structure and microstructure of the thick-film resistors not doped with and doped with TiB2 were studied by means of XRD,SEM and EDS.Oxidation kinetics curves of the two thick-film resistors conform to the parabolic law ((Aw)n=kt).The index n of the two thick-film resistors was 4,and the oxidation rate constant (K1) of TiB2-doped thick-film resistors was 1955.8 g4m8h-1 at 400℃,while the oxidation rate constant (K2) of TiB2-free thick-film resistors was 4694.9 g4.m-8.h-1 since higher compactness of TiB2-doped thick-film resistors contributed to higher oxidation resistance.The index n of the two thick-film resistors was 2 at the temperature above 500 ℃,and the oxidation rate constant of TiB2-doped thick-film resistors was higher than that of the TiB2-free one,since gaps were present in the film as a result of TiB2 oxidation.The oxidation resistance of thick-film resistors reduced in case of severe oxidation in the film (oxidation products were mainly (TiO2,B2O3,Fe2O3 and (Fe0.6Cr0.4)2O3).In stainless steel thick-film resistors,the doping of TiB2 can improve oxidation resistance of the film at 400 ℃,but damage oxidation resistance of the film at temperature above 500 ℃.关键词
TiB2/316L不锈钢/多孔陶瓷/厚膜电阻/抗氧化性能Key words
TiB2/316L stainless steel/porous ceramics/thick film resistors/oxidation resistance分类
矿业与冶金引用本文复制引用
周宏明,简帅,李荐..TiB2掺杂对316L不锈钢厚膜电阻抗氧化性能的影响[J].表面技术,2017,46(3):157-164,8.基金项目
清远市科技计划项目(2015D009) （2015D009）
清远市清城区科技计划项目(2015B04)Supported by Science and Technology Project of Qingyuan City (2015D009) and Science and Technology Projects of Qingcheng District(2015B04) （2015B04）
