重庆邮电大学学报（自然科学版）2017，Vol.29Issue(2)：161-166,6.DOI:10.3979/j.issn.1673-825X.2017.02.004
硅集成的高Q值、高谐振频率的射频变压器
Silicon-based radio frequency integrated circuit's transformer with high quality factor and high self-resonant frequency
摘要
Abstract
A novel graphic structure transformer on silicon substrate is proposed for radio frequency integrated circuits(RFICs).Considering passive integrated transformer devices has a great effect on the improvement of characteristic at radio frequency integrated circuits,the top level thick Cu metal and 24 side concave convex structure are utilized to ensure the transformer with the advantage of better performance and less chip area.Using Cadence Virtuoso layout tools and Agilent ADS Momentum,the novel transformer is designed based on TSMC 0.13 μm 1P6M CMOS technology.Compared with the traditional square,hexagonal and octagonal transformer,the result shows the novel transformer has 1.12,1.00 and 0.58 GHz improvements in self-resonant frequency(SRF),and 2.4,0.9 and 0.3 enhancements in quality factor,9%,10%,and 6% reductions in chip area,respectively.Therefore,the transformer in radio frequency integrated circuits will further improve the circuit performance and reduce the chip price.关键词
硅基/射频/品质因子/自谐振频率/变压器Key words
silicon-based/radio frequency/quality factor/self-resonant frequency/transformer分类
信息技术与安全科学引用本文复制引用
张华斌,刘萍,邓春健,杨健君,刘黎明,陈卉,王红航,熊召新..硅集成的高Q值、高谐振频率的射频变压器[J].重庆邮电大学学报（自然科学版）,2017,29(2):161-166,6.基金项目
国家自然科学基金(11305031) （11305031）
广东省自然科学基金(S2013010011546) （S2013010011546）
中山市科技计划项目(2015SYF0202) （2015SYF0202）
The National Natural Science Foundation of China(11305031) （11305031）
The Science Foundation of Guangdong Province(S2013010011546) （S2013010011546）
The Science Project of Zhongshan(2015SYF0202) （2015SYF0202）
